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| SHINDENGEN Schottky Rectifiers (SBD) Dual SF10SC4R 40V 10A FEATURES *oe Tj150*Z *oe PRRSM avalanche guaranteed *oe Fully Isolated Molding *oe Dielectric strength 2kV guaranteed APPLICATION *oe Switching power supply *oe DC/DC converter *oe Home Appliances, Office Equipment *oe Telecommunication OUTLINE DIMENSIONS Case : FTO-220 Unit : mm RATINGS *oeAbsolute Maximum Ratings (If not specified Tc=25*Z) Item Symbol Conditions Ratings Unit Storage Temperature Tstg -40*150 *Z Operating Junction Temperature Tj 150 *Z VRM Maximum Reverse Voltage 40 V RRSM Repetitive Peak Surge ReverseV Voltage Pulse width 0.5ms, duty 1/40 45 V Average Rectified Forward Current 50Hz sine wave, R-load, Rating for each diode Io/2, Tc=131*Z I O 10 A Peak Surge Forward Current IFSM50Hz sine wave, Non-repetitive 1 cycle peak value, Tj=25*Z 150 A Repetitive Peak Surge ReversePRRSM Power Pulse width 10Es, Rating of per diode, Tj=25*Z 330 W Dielectric Strength Vdis Terminals to case, AC 1 minute 2 kV Mounting Torque TOR (Recommended torque*0.3Nm) F 0.5 Nm *oeElectrical Characteristics (If not specified Tc=25*Z) Item Symbol Conditions Ratings Unit V Forward Voltage F I =5A, Pulse measurement, Rating of per diode F Max.0.55 V IR V=V , Pulse measurement, Rating of per diodeMax.3.5 mA Reverse Current R RM Junction Capacitance Cj f=1MHz,=10V, Rating of per diode RV Typ.180 pF Thermal Resistance AEjc junction to case Max.2.3 *Z/W Copyright & Copy;1999 Shindengen Electric Mfg.Co.Ltd SF10SC4R Forward Voltage 10 Forward Current IF [A] Tc=150C [MAX] Tc=150C [TYP] Tc=25C [MAX] Tc=25C [TYP] 1 Pulse measurement per diode 0.1 0 0.2 0.4 0.6 0.8 1 1.2 1.4 1.6 Forward Voltage VF [V] SF10SC4R Junction Capacitance f=1MHz Tc=25C TYP per diode 1000 Junction Capacitance Cj [pF] 100 0.1 1 10 Reverse Voltage VR [V] SF10SC4R 1000 Reverse Current Tc=150C [MAX] 100 Tc=150C [TYP] Reverse Current IR [mA] Tc=125C [TYP] 10 Tc=100C [TYP] 1 Tc=75C [TYP] 0.1 Pulse measurement per diode 0.01 0 5 10 15 20 25 30 35 40 Reverse Voltage VR [V] SF10SC4R 20 Reverse Power Dissipation Reverse Power Dissipation PR [W] 15 DC D=0.05 0.1 0.2 0.3 10 0.5 5 SIN 0.8 0 0 10 20 30 40 50 Reverse Voltage VR [V] Tj = 150C 0 VR tp D=tp /T T SF10SC4R 10 Forward Power Dissipation DC Forward Power Dissipation PF [W] D=0.8 8 SIN 0.3 6 0.05 0.2 0.1 0.5 4 2 0 0 2 4 6 8 10 12 14 16 Average Rectified Forward Current IO [A] Tj = 150C 0 tp D=tp /T T IO SF10SC4R 20 Derating Curve Average Rectified Forward Current IO [A] DC 15 D=0.8 0.5 10 SIN 0.3 0.2 5 0.1 0.05 0 0 20 40 60 80 100 120 140 160 Case Temperature Tc [C] VR = 20V 0 0 IO VR tp D=tp /T T SF10SC4R 200 Peak Surge Forward Capability IFSM 10ms 10ms 1 cycle Peak Surge Forward Current IFSM [A] 150 non-repetitive, sine wave, Tj=25C before surge current is applied 100 50 0 1 2 5 10 20 50 100 Number of Cycles [cycles] SBD 120 Repetitive Surge Reverse Power Derating Curve 100 PRRSM Derating [%] 80 60 40 20 0 0 50 100 150 Junction Temperature Tj [C] IRP IR 0.5IRP 0 tp PRRSM = IRP x VRP VR VRP SBD 10 Repetitive Surge Reverse Power Capability PRRSM p) / PRRSM p=10s) Ratio (t (t 1 0.1 1 10 100 Pulse Width t p [s] IRP IR 0.5IRP 0 tp PRRSM = IRP x VRP VR VRP |
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